Semitransparent perovskite cells for upconversion
A silicon or perovskite cell throws away every photon below its bandgap. Triplet–triplet annihilation upconversion recovers some of them by combining two low-energy photons into one the cell can absorb — but the upconverter has to sit behind the cell, which means the light has to get through the back contact first. A normal device has a hundred nanometres of evaporated silver there.
So the back contact has to become transparent, and the only practical way to do that is sputtering a conducting oxide. Sputtering is violent: energetic species from the plasma reach the organic layers underneath and damage them long before you have a usable film. That conflict is the whole problem.
Opaque baseline — champion 18.9% PCE
- Ag100 nm
- BCP6–15 nm
- C605–25 nm
- Perovskiteabsorber
- 2PACzmonolayer
- ITOcontact
- Glass
Semitransparent — best 13.9% PCE
- Agedge contact
- IZOsputtered
- BCP6–15 nm
- C605–25 nm
- Perovskiteabsorber
- 2PACzmonolayer
- ITOcontact
- Glass
Silver stays in both. On the semitransparent devices it is patterned at the edge as a contact rather than covering the active area. Sb2O3 and SnO2 buffer routes between C60 and the oxide are still being explored.
What I did
Fabricated 120+ substrates end to end — glovebox spin coating through thermal evaporation — then sputtered IZO and ITO top contacts on the Lesker, with thickness on the Dektak and transmission on the Cary 6000i.
What came out of it
- The group's first working semitransparent cells.
- A two-step soft-sputter recipe — 37 W seed, then 100 W bulk, deposited directly onto the BCP — that cut median series resistance 4× and raised shunt resistance 2.7×, taking the best device from 10.6% to 13.9% PCE at over 80% transmittance beyond 750 nm.
- A root-cause failure analysis of a batch that came out shorted. Bare-glass witness samples through four-point probe, UV-Vis and photoluminescence traced the yield limiter to evaporation-mask step coverage; a masking split then gave 8/8 working devices against 4/8 without.
- A full-factorial DOE crossing C60 (5–25 nm) and Sb2O3 (5–15 nm) thickness. Best stack in the tested range was 25/5 nm — at a corner of the design space, so the true optimum may sit outside it — with remaining losses attributed to series resistance.
Sputtered IZO on bare glass, patterned through a shadow mask. Test pieces like these are how a recipe gets characterised before it goes anywhere near a device.
Poster
Fabrication and Optimization of Semitransparent Perovskite Solar Cells for Upconversion Integration — Tung D. Nguyen, Tyler K. Colenbrander, Daniel N. Congreve. Presented at the Stanford EE REU symposium, 2026.